丝印：H26R；Package：SOT-23(DBV)；SN74AUP1G126 Low-Power Single Bus Buffer Gate With Tri-State Output

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22− – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9

文件：2.45151 Mbytes 页数：49 Pages

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德州仪器

Low-Power Single Bus Buffer Gate With Tri-State Output

文件：1.86639 Mbytes 页数：43 Pages

TI

德州仪器

Low-Power Single Bus Buffer Gate With 3-State Output

文件：1.68226 Mbytes 页数：40 Pages

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德州仪器

LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATS OUTPUT

文件：366.54 Kbytes 页数：17 Pages

TI

德州仪器