2SJ647中文资料瑞萨数据手册PDF规格书

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SJ647 is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ647 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)