型号：SN74AUP1G125DBVR；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI2

德州仪器

型号：SN74AUP1G125DBVT；Package：SOT-23；SN74AUP1G125 Low-Power Single Bus Buffer Gate With 3-State Output

1 Features 1• Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 μA Maximum) • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：2.40246 Mbytes 页数：51 Pages

TI2

德州仪器

型号：SN74AUP2G125DCUR；Package：VSSOP；LOW-POWER DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V) • Low Input Capacitance (CI = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：931.87 Kbytes 页数：29 Pages

TI2

德州仪器

型号：74AUP1G125DBVRG4；Package：SOT-23；Low-Power Single Bus Buffer Gate With 3-State Output

文件：1.85095 Mbytes 页数：46 Pages

TI1

德州仪器

型号：SN74AUP1G125DBVR；Package：SOT-23；Low-Power Single Bus Buffer Gate With 3-State Output

文件：1.85095 Mbytes 页数：46 Pages

TI1

德州仪器

型号：SN74AUP1G125DBVT；Package：SOT-23；Low-Power Single Bus Buffer Gate With 3-State Output

文件：1.85095 Mbytes 页数：46 Pages

TI1

德州仪器

型号：H25R1202；Reverse Conducting IGBT with monolithic body diode

Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers e

文件：407.7 Kbytes 页数：12 Pages

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