丝印：H22；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

文件：197.82 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：H22；Package：SMT6；Dual digital transistors

Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat)=40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. 3) Two DTC663E chips in a SMT

文件：70.04 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：H22；Package：DFN2018-6B；1- Line Uni- directional TVS Diode

文件：828.16 Kbytes 页数：4 Pages

LRC

乐山无线电

丝印：H22；Package：SOD-123FL；Schottky Barrier Rectifiers

文件：498.9 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：H22；Package：SOD-123F；Schottky Barrier Rectifiers

文件：461.88 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：H22B**；Package：SOT-563；3-MODE 150mA LDO REGULATOR

文件：843.5 Kbytes 页数：31 Pages

RICOH

理光

丝印：H22D**；Package：SOT-563；3-MODE 150mA LDO REGULATOR

文件：843.5 Kbytes 页数：31 Pages

RICOH

理光

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

60V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：563.91 Kbytes 页数：7 Pages

HUIXIN

慧芯电子

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC