丝印：H10；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVER

文件：119.86 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H10；Package：UMT6；General purpose (dual digital transistors)

Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVER

文件：119.86 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H10；Package：SOT-363；General purpose (Dual digital transistor)

文件：831.46 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：H10N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N65ANP；Package：TO-220；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：H10N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：H10N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

SY

顺烨电子