丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

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顺烨电子

丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子