首页 >HRH10N65ANF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HRH10N65ANF | 丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power 文件：2.79466 Mbytes 页数：11 Pages | SY 顺烨电子 | SY | |
HRH10N65ANF | 丝印：H10N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability 文件：3.32761 Mbytes 页数：8 Pages | SY 顺烨电子 | SY | |
650V N-Channel Planar MOSFET | HRmicro 华瑞微 | HRmicro | ||
650V N-Channel Planar MOSFET Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power 文件：2.79466 Mbytes 页数：11 Pages | SY 顺烨电子 | SY | ||
650V N-Channel Planar MOSFET Features Ultra Low gate Charge Low Crss Fast switching capability 文件：3.32761 Mbytes 页数：8 Pages | SY 顺烨电子 | SY | ||
650V N-Channel Planar MOSFET Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power 文件：2.79466 Mbytes 页数：11 Pages | SY 顺烨电子 | SY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HRmicro华瑞微 |
25+ |
TO-220F |
750 |
只要挂着就有货原装正品价格优惠 |
询价 | ||
HRMICRO/华瑞微 |
24+ |
TO-220F |
65000 |
原装正品保障优势供应 |
询价 |
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