丝印：H10N70ANV；Package：TO-3P；700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

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