丝印：H1；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H1；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H1；Package：SOD-123；Small Signal Zener Diodes

FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 with a “B” suffix (e.g.: MMSZ5225B-V), suffix “C” is ± 2 tolerance • These diodes are also available in MiniMELF case with the designation TZM5225 to TZM5267, DO-35 case with type designation 1N5225 to 1N52

文件：136.74 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：H1；Package：SOD-123；Small Signal Zener Diodes

FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 with a “B” suffix (e.g.: MMSZ5225B-V), suffix “C” is ± 2 tolerance • These diodes are also available in MiniMELF case with the designation TZM5225 to TZM5267, DO-35 case with type designation 1N5225 to 1N52

文件：80.22 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：H1；Package：SOD-123；Small Signal Zener Diodes

FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 with a “B” suffix (e.g.: MMSZ5225B-V), suffix “C” is ± 2 tolerance • These diodes are also available in MiniMELF case with the designation TZM5225 to TZM5267, DO-35 case with type designation 1N5225 to 1N52

文件：100.97 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：H1；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 PNP/PNP complement: PEMB11 2. Features and benefits • 100 mA output current capability • Built-in bias re

文件：223.25 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：H1；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 PNP/PNP complement: PUMB11 2. Features and benefits • 100 mA output current capability • Built-in bias resistors

文件：796.48 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：H1；Package：SOT-363；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H1；Package：SOD-523；Voltage regulator diodes

文件：75.4 Kbytes 页数：10 Pages

PHI

PHI

丝印：H1；Package：SOD-523；Voltage regulator diodes

文件：646.84 Kbytes 页数：10 Pages

恩XP