MMSZ5241BS

Marking：H1；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5241BS

Marking：H1；Package：SOD-323；Silicon Planar Zener Diodes

Features Totalpowerdissipation:Max.500mW. Widezenerreversevoltagerange2.4Vto39V. Smallplasticpackagesuitableforsurfacemounteddesign. Toleranceapproximately±5

PEMH11

Marking：H1；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inanultrasmallandflatleadSOT666 Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PEMD3 PNP/PNPcomplement:PEMB11 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasre

PESD5V0L2UU

Marking：H1；Package：SOT323；Low capacitance unidirectional ESD protection diodes

1.1Generaldescription LowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodes inaverysmallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectupto twosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applicatio

PESD5V0L2UU-Q

Marking：H1；Package：SOT323；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinavery smallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage,designedtoprotectupto twosignallinesfromthedamagecausedbyESDandothertransients. 2.Featuresan

PHFM301

Marking：H1；Package：SM；3.0A Surface Mount High Effciency Rectifiers -50V - 1000V

FEATURES *Glasspassivateddevice *Idealforsurfacemountedapplications *Lowleakagecurrent *Metallurgicallybondedconstruction *MoistureSensitivityLevel1 *Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halohenfreeproductforpackingcodesuffix

PUMH11

Marking：H1；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PUMD3 PNP/PNPcomplement:PUMB11 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors

PUMH11-Q

Marking：H1；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/NPNResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Red

PUMH14

Marking：H1；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open

1.Generaldescription NPN/NPNResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. NPN/PNPcomplement:PUMD14 PNP/PNPcomplement:PUMB14 2.Featuresandbenefits •Built-inbiasresistors •Simplifiedcircuitdesign •Reducesco

PZU6.2B2L

Marking：H1；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features •Non-repetitivepeakrerversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤250mW •Toleranceseries:B:approximately±5