NPN resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduce

文件：55.81 Kbytes 页数：8 Pages

PHI

飞利浦

NPN/NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

DESCRIPTION NPN/NPN resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver

文件：144.65 Kbytes 页数：8 Pages

恩XP

丝印：H1；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD3 PNP/PNP complement: PEMB11 2. Features and benefits • 100 mA output current capability • Built-in bias re

文件：223.25 Kbytes 页数：11 Pages

NEXPERIA

安世

NPN/NPN resistor-equipped transistors R1 = 10 k?? R2 = 10 k?

文件：622.78 Kbytes 页数：14 Pages

PHI

飞利浦

NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世