PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

文件：168.62 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06192 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.20471 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

6 Amp Glass Passivated Quick Connect Rectifier

Features • Package suitable for assembly • Glass passivated junction • High current capability • Plastic package has underwriters laboratory flammability classification 94 V-O • RoHS compliant

文件：147.09 Kbytes 页数：3 Pages

TAITRON

The 4th Generation Soft Switching Applications

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：183.83 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

The 4th Generation Soft Switching Applications

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：277.42 Kbytes 页数：6 Pages

TOSHIBA

东芝

Gate Bipolar Transistor Silicon N Channel IGBT

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：175.29 Kbytes 页数：6 Pages

TOSHIBA

东芝

Current Resonance Inverter Switching Application

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：182.08 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝