Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Consumer Application Voltage Resonance Inverter Switching Application

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：188.35 Kbytes 页数：6 Pages

TOSHIBA

东芝

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications The 4th Generation • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC =

文件：173.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.3V@IC=10A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Frequency Converters ·Air Conditioning ·UPS,PFC ·Motor Drives

文件：363.33 Kbytes 页数：3 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.11 μs (typ.) (IC = 60 A) • Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) • FRD included between emitter and collector • TO-3P(LH) (Toshiba package name)

文件：166.92 Kbytes 页数：6 Pages

TOSHIBA

东芝

6 Amp Glass Passivated Quick Connect Rectifier

Features • Package suitable for assembly • Glass passivated junction • High current capability • Plastic package has underwriters laboratory flammability classification 94 V-O • RoHS compliant

文件：147.09 Kbytes 页数：3 Pages

TAITRON

Interface Portions and In-line Portions of the Various Units and Devices

Features ● Can be used at currents up to 20 A. ● Shield processing can be performed easily with crimping.

文件：96.32 Kbytes 页数：3 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

Interface Portions and In-line Portions of the Various Units and Devices

Features ● Can be used at currents up to 20 A. ● Shield processing can be performed easily with crimping.

文件：96.32 Kbytes 页数：3 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社