Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications The 4th Generation • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC =

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.3V@IC=10A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Frequency Converters ·Air Conditioning ·UPS,PFC ·Motor Drives

文件：363.33 Kbytes 页数：3 Pages

ISC

无锡固电

IGBT for soft switching applications

Number of Circuits：2\nBuilt-in Diodes：Yes\nComments：Non isolation package\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 60 A \nBreakdown Voltage VCES 1000 V ;

Toshiba

东芝

Package：TO-3PL；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 60A 170W TO3P LH

Toshiba Semiconductor and Storage