| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS60V RDSON(MAX.)55mΩ ID6A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.02Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. |  | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | | ||
60VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. |  | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
TMOSPOWERFET55AMPERES60VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托罗拉 |  | ||
TMOSPOWERFET55AMPERES60VOLTSRDS(on)=18mohm TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Desig | MotorolaMotorola, Inc 摩托罗拉 | | ||
TMOSPOWERFET55AMPERES60VOLTSRDS(on)=18mohm TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.Desig | MotorolaMotorola, Inc 摩托罗拉 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOFORD(谷峰) |
2112+ |
DFN8L-5×6 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
GOFORD |
2022+ |
DFN56 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
GOFORD |
2022+ |
DFN5X6 |
79999 |
询价 | |||
GOFORD |
21+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
GOFORD |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
GOFORD |
23+ |
DFN8L-5*6 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
GOFORD |
23+ |
DFN8L-5*6 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
GOFORD |
23+ |
DFN5X6 |
19698 |
原装正品现货库存假一赔十欢迎询价 |
询价 | ||
Goford Semiconductor |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
GOFORD(谷峰) |
23+ |
DFN8(4.9x5.75) |
6000 |
询价 |
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