60V N-Channel MOSFET

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KERSEMI

TMOS POWER FET 55 AMPERES 60 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

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MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

文件：188.6 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Desig

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MOTOROLA

摩托罗拉