PHOTO FET OPTOCOUPLERS

DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and

文件：403.29 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PHOTO FET OPTOCOUPLERS

文件：553.74 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Package：6-DIP（0.300"，7.62mm）；包装：管件 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP

ONSEMI

安森美半导体

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：245.3 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件：338.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：6-DIP（0.400"，10.16mm）；包装：管件 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP

ONSEMI

安森美半导体

Package：6-SMD，鸥翼；包装：管件 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISOLTR 5.3KV PHOTO FET 6-SMD

ONSEMI

安森美半导体