General Description

The H11FXM series consists of a Gallium−Aluminum−Arsenide

IRED emitting diode coupled to a symmetrical bilateral silicon

photo−detector. The detector is electrically isolated from the input

and performs like an ideal isolated FET designed for distortion−free

control of low level AC and DC analog signals. The H11FXM series

devices are mounted in dual in−line packages.

Features

• As a Remote Variable Resistor:

♦ ≤ 100  to ≥ 300 M

♦ ≤15 pF Shunt Capacitance

♦ ≥100 G I/O Isolation Resistance

• As an Analog Switch:

♦ Extremely Low Offset Voltage

♦ 60 Vpk−pk Signal Capability

♦ No Charge Injection or Latch−Up

♦ UL Recognized (File #E90700)

• These are Pb−Free Devices

Application

• As a Remote Variable Resistor:

♦ Isolated Variable Attenuator

♦ Automatic Gain Control

♦ Active Filter Fine Tuning/Band Switching

• As an Analog Switch:

♦ Isolated Sample and Hold Circuit

♦ Multiplexed, Optically Isolated A/D Conversion

H11F2M属于隔离器 > 光隔离器 - 晶体管，光电输出。安森美半导体公司制造生产的H11F2M光隔离器 - 晶体管，光电输出晶体管或光电输出光隔离器通常出于安全或功能性原因，使用光来跨过电绝缘层进行信息传输。与其他光隔离器类型的区别在于，它们使用简单的光电晶体管或光伏电池（太阳能电池）作为输出设备。这些器件的输出不需要外部电源即可运行，并且具有模拟特性，因此可用于在无法实现电连接的电路之间传输模拟信息。