H11F1SVM中文资料安森美半导体数据手册PDF规格书

General Description

The H11FXM series consists of a Gallium−Aluminum−Arsenide

IRED emitting diode coupled to a symmetrical bilateral silicon

photo−detector. The detector is electrically isolated from the input

and performs like an ideal isolated FET designed for distortion−free

control of low level AC and DC analog signals. The H11FXM series

devices are mounted in dual in−line packages.

特性 Features

• As a Remote Variable Resistor:

♦ ≤ 100  to ≥ 300 M

♦ ≤15 pF Shunt Capacitance

♦ ≥100 G I/O Isolation Resistance

• As an Analog Switch:

♦ Extremely Low Offset Voltage

♦ 60 Vpk−pk Signal Capability

♦ No Charge Injection or Latch−Up

♦ UL Recognized (File #E90700)

• These are Pb−Free Devices

Application

• As a Remote Variable Resistor:

♦ Isolated Variable Attenuator

♦ Automatic Gain Control

♦ Active Filter Fine Tuning/Band Switching

• As an Analog Switch:

♦ Isolated Sample and Hold Circuit

♦ Multiplexed, Optically Isolated A/D Conversion