isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

60V N-Channel MOSFET

文件：1.18877 Mbytes 页数：10 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，UniFETTM，60 V，55 A，22 mΩ，TO-220F

这些N沟道增强模式功率场效应晶体管采用飞兆专有的平面条形DMOS技术生产。这一先进技术是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关电源、有源功率因数校正以及基于半桥拓扑的电子灯镇流器。 •55A、60V、RDS(on) = 0.022Ω @VGS = 10 V\n•低栅极电荷（典型值30 nC）\n•低Crss（典型值60pF）\n•快速开关;

ONSEMI

安森美半导体

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：601.08 Kbytes 页数：9 Pages

Fairchild

仙童半导体

60V N-Channel MOSFET

文件：608.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体

60V N-Channel MOSFET

文件：608.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体