Rectifier Diodes

GPSemi

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件：98.14 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件：98.14 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

文件：118.37 Kbytes 页数：7 Pages

RENESAS

瑞萨