Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件：98.14 Kbytes 页数：8 Pages

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Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件：98.14 Kbytes 页数：8 Pages

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Transistors>Switching/MOSFETs

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瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

文件：118.37 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

文件：118.37 Kbytes 页数：7 Pages

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Next Generation approved BMS Transformers

Features and Benefits: Fully qualified with leading BMS Silicon Transformer only design provides for flexible PCB layout Construction meets IEC 61558 and IEC/UL62368-1 High temperature performance up to +125°C Automated Winding and Production Process AEC-Q200 qualified, RoHS and REACh

文件：1.17627 Mbytes 页数：3 Pages

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