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HAT2167H

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件:98.14 Kbytes 页数:8 Pages

RENESAS

瑞萨

HAT2167H-EL-E

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)

文件:98.14 Kbytes 页数:8 Pages

RENESAS

瑞萨

HAT2167H

Transistors>Switching/MOSFETs

Renesas

瑞萨

IR2167

PFC BALLAST CONTROL IC

Description The IR2167 is a fully integrated, fully protected 600V ballast control IC designed to drive all types of fluorescent lamps. PFC circuitry provides for high PF, low THD and DC Bus regulation. Externally programmable features such as preheat time & frequency, ignition ramp character

文件:937.36 Kbytes 页数:30 Pages

IRF

SSM2167

Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating

GENERAL DESCRIPTION The SSM2167 is a complete and flexible solution for conditioning microphone inputs in personal electronics and computer audio systems. It is also excellent for improving vocal clarity in communications and public address systems. A low noise voltage controlled amplifier (VCA)

文件:121.15 Kbytes 页数:8 Pages

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亚德诺

SSM2167-EVAL

Low Voltage Microphone Preamplifier with Variable Compression and Noige Gating

GENERAL DESCRIPTION The SSM2167 is a complete and flexible solution for conditioning microphone inputs in personal electronics and computer audio systems. It is also excellent for improving vocal clarity in communications and public address systems. A low noise voltage controlled amplifier (VCA)

文件:275.37 Kbytes 页数:12 Pages

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亚德诺

详细参数

  • 型号:

    HAT2167H

  • 功能描述:

    MOSFET N-CH 30V 40A LFPAK

  • RoHS:

    是

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
RENASES
22+
LFPAK
5000
进口原装!现货库存
询价
TOSHIBA/东芝
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
询价
RENESAS
03+
LFPAK-4
6
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESAS
2023+
LFPAK-4
8800
正品渠道现货 终端可提供BOM表配单。
询价
REN
23+
LFPAK
8000
只做原装现货
询价
REN
23+
LFPAK
7000
询价
RENESAS
24+
LFPAK-4
16900
原装正品现货支持实单
询价
RENESAS
2511
LFPAK-4
6
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
询价
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
更多HAT2167H供应商 更新时间2026-9-26 14:10:00