Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 13.0mΩ typ. (at VGS= 10 V)

文件：114.39 Kbytes 页数：8 Pages

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Power MOSFETs and IGBT for PDP

文件：136.18 Kbytes 页数：2 Pages

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Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 13.0mΩ typ. (at VGS= 10 V)

文件：114.39 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

•  High speed switching\n•  Capable of 4.5 V gate drive\n•  Low drive current\n•  High density mounting\n•  Low on-resistance RDS(on) = 13.0mΩ typ. (at VGS= 10 V);

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