Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

文件：118.37 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)

文件：118.37 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Power MOS FET Power Switching

Renesas

瑞萨

OUTLINE COUP

文件：80.49 Kbytes 页数：1 Pages

IPP

PFC BALLAST CONTROL IC

Description The IR2167 is a fully integrated, fully protected 600V ballast control IC designed to drive all types of fluorescent lamps. PFC circuitry provides for high PF, low THD and DC Bus regulation. Externally programmable features such as preheat time & frequency, ignition ramp character

文件：937.36 Kbytes 页数：30 Pages

IRF

PFC BALLAST CONTROL IC

Description The IR2167 is a fully integrated, fully protected 600V ballast control IC designed to drive all types of fluorescent lamps. PFC circuitry provides for high PF, low THD and DC Bus regulation. Externally programmable features such as preheat time & frequency, ignition ramp character

文件：1.15583 Mbytes 页数：33 Pages

IRF