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DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODESDiodes Incorporated

达尔科技

DMMT5551

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体公司

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODESDiodes Incorporated

达尔科技

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DMMT5551-TP

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOMDc Components

直流元件直流元件有限公司

DXT5551

160VNPNTRANSISTOR

DIODESDiodes Incorporated

达尔科技

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODESDiodes Incorporated

达尔科技

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain

DIODESDiodes Incorporated

达尔科技

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

FFB5551

Dual-ChipNPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FFB5551

Dual-ChipNPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

FAIRCHILDSmallSignalTransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMBS5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    GMBT5551

  • 功能描述:

    NPN EPITAXIAL PLANAR TRANSISTOR

供应商型号品牌批号封装库存备注价格
GTM
09+
SOT-23
150000
询价
GTM
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
GTM
22+23+
SOT-23
40171
绝对原装正品现货,全新深圳原装进口现货
询价
GTM
23+
SOT-23
63000
原装正品现货
询价
23+
N/A
46580
正品授权货源可靠
询价
原装GC
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
GTM
21+
SOT-23
35200
一级代理/放心采购
询价
GTM
22+
SOT-23
360000
进口原装房间现货实库实数
询价
GTM
SOT-23
265209
假一罚十原包原标签常备现货!
询价
更多GMBT5551供应商 更新时间2024-5-16 16:30:00