IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits •

IRG4PC50FPBF

IGBT

DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries

IRG4PC50FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50FPBF

FastSpeedIGBT-INSULATEDGATEBIPOLARTRANSISTOR

FastSpeedIGBT INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC50K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerat

IRG4PC50KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.84V,@Vge=15V,Ic=30A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features ●ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V ●Generation4IGBTdesignprovidestigh

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4PC50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •ShortCircuitRatedUltraFast:Optimizedforhigh operationfrequencies>5.0kHz,andShortCircuitRated to10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFRE

IRG4PC50KPBF

INSULATEDGATEBIPOLARTRANSISTOR