MMSZ5228BS

Marking：G3；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

PBRN123EK

Marking：G3；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PDTA113ZM

Marking：G3；Package：SC-101；PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PESD12VS1UL

Marking：G3；Package：SOD882；Unidirectional ESD protection diodes

1.1Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodesinaSOD882leadlessultra smallSurfaceMountedDevice(SMD)plasticpackagedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applicatio

PMEG3020EGW-Q

Marking：G3；Package：SOD123；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotectionencapsulatedin smallSOD123Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤2A •Reversevoltage:VR≤30V •Lowforwardvoltagety

PMEG4005AEV

Marking：G3；Package：SOT666；40 V, 0.5 A very low VF Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOT666ultrasmallSMDplasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highsurgecurrent •U

PMST5551

Marking：G3；Package：SC-70；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD) plasticpackage. PNPcomplement:PMST5401 2.Featuresandbenefits •Lowcurrent(max.300mA) •Highvoltage(max.160V) •AEC-Q101qualified 3.Applications •Switchingan

PMST5551

Marking：G3；Package：SOT323；NPN high-voltage transistors

FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.160V). APPLICATIONS •Switchingandamplificationinhighvoltageapplications suchastelephony. DESCRIPTION NPNhigh-voltagetransistorinaSOT323plasticpackage. PNPcomplement:PMST5401.

PMST5551-Q

Marking：G3；Package：SC-70；NPN high-voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Lowcurrent(max.300mA) •Highvoltage(max.160V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplicati

PTVS78VP1BPL

Marking：G3；Package：CFP5-FL；600 W Transient Voltage Suppressor

1.Generaldescription 600Wbi-directionalTransientVoltageSuppressor(TVS)inaCFP5-FL(SOD128FL)smallandflat leadSurface-MountedDevice(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=