Compact MiniDIP, 2W Single & Dual Output DC/DC Converters

文件：75.01 Kbytes 页数：2 Pages

MPD

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2310 is universally used for all commercial-industrial applications. Features * Simple Drive Requirement * Small Package Outline

文件：350.02 Kbytes 页数：4 Pages

GTM

勤益投资控股

丝印：G2312；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：839.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2313 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2313 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *

文件：355.12 Kbytes 页数：4 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Low on-resistance

文件：364.24 Kbytes 页数：4 Pages

GTM

勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：353.75 Kbytes 页数：4 Pages

ETL

亚历电子

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes 页数：1 Pages

HEYCO

Break-Away Bumpers

文件：132.1 Kbytes 页数：1 Pages

HEYCO

Break-Away Bumpers

文件：132.09 Kbytes 页数：1 Pages

HEYCO

Break-Away Bumpers

文件：132.09 Kbytes 页数：1 Pages

HEYCO