N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Features * Capable of 2.5V gate drive * Low on-resistance

文件：364.24 Kbytes 页数：4 Pages

GTM

勤益投资控股

Break-Away Bumpers

文件：132.1 Kbytes 页数：1 Pages

HEYCO

Break-Away Bumpers

文件：132.09 Kbytes 页数：1 Pages

HEYCO

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：367.95 Kbytes 页数：4 Pages

ETL

亚历电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股