HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

文件：50.19 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

文件：209.23 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

文件：50.95 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

文件：56.3 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V

文件：174.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V

文件：174.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

文件：174.34 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1

文件：56.25 Kbytes 页数：4 Pages

POWEREX

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1

文件：50.89 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

文件：174.34 Kbytes 页数：7 Pages

RENESAS

瑞萨