Useful of 8,000 hours at 85ºC

Features • FX3 series is the product developed for the purpose of the miniaturization as a capacitor for primary side filters of an inverter, DC servo, and a chopper control circuit. • FX3 series has smaller case size (ave. 16) compared with FX2 series.

文件：65.44 Kbytes 页数：2 Pages

AICTECH

EZ-USB짰 FX3: SuperSpeed USB Controller

文件：568.26 Kbytes 页数：45 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

MICRO MINIATURE AT STRIP CRYSTAL

文件：538.29 Kbytes 页数：1 Pages

FOX

C-NET AUDIO PROCESSOR

[CML Semiconductor] Brief Description The FX304 is a duplex filter array and frequency inversion scrambler compatible with the Net-C specification. Features/Applications ● Full Duplex Audio Processing ● Designed to meet Net-C Cellular Specification ● On-Chip Audio Bandpass Filters (300-3000H

文件：220.64 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Obsolete Product For Information Only.

[CML] DELTA CODEC HYBRID

文件：235.73 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diod

文件：49.94 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.61 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.61 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

文件：209.23 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

文件：55.48 Kbytes 页数：4 Pages

POWEREX