High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

文件：173.72 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP

文件：50.56 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........10

文件：55.86 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

文件：173.72 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.97 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode

文件：75.91 Kbytes 页数：4 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode

文件：70.57 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.97 Kbytes 页数：7 Pages

RENESAS

瑞萨

Useful of 8,000 hours at 85ºC

Features • FX3 series is the product developed for the purpose of the miniaturization as a capacitor for primary side filters of an inverter, DC servo, and a chopper control circuit. • FX3 series has smaller case size (ave. 16) compared with FX2 series.

文件：65.44 Kbytes 页数：2 Pages

AICTECH

Useful of 8,000 hours at 85ºC

Features • FX3 series is the product developed for the purpose of the miniaturization as a capacitor for primary side filters of an inverter, DC servo, and a chopper control circuit. • FX3 series has smaller case size (ave. 16) compared with FX2 series.

文件：65.44 Kbytes 页数：2 Pages

AICTECH