HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

文件：51.37 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Isc P-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management

文件：315.01 Kbytes 页数：2 Pages

ISC

无锡固电

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：174.49 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：173.33 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

文件：55.55 Kbytes 页数：4 Pages

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod

文件：50.27 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：173.33 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID ................................................................... –20A • Integrated Fast Recovery Diode

文件：50.26 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：207.06 Kbytes 页数：7 Pages

RENESAS

瑞萨

Useful of 8,000 hours at 85ºC

Features • Developed specially for the demand of higher voltage with compact size. • The size is reduced by around 14 of conventional FXA series through development of electrolyte liquid. • 600V added in the series.

文件：67.66 Kbytes 页数：3 Pages

AICTECH