High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：79.35 Kbytes 页数：4 Pages

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瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

文件：64.37 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod

文件：59.06 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery

文件：50.78 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.62 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery

文件：45.48 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：172.62 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：209.61 Kbytes 页数：7 Pages

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瑞萨