TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low Frequency Amplifier ● Medium Speed Switching

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TRANSISTOR (NPN)

FEATURES ● Extremely Satisfactory Linearity of the Forward Current Transfer Ratio hFE ● Wide Safe Operation Area ● High Transition Frequency fT ● Full-pack Package which can be Installed to the Heat Sink with One Screw.

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General Purpose Transistor

General Purpose Transistor NPN Silicon FEATURE Complementary PNP Type available (FTB1116A)

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TRANSISTOR (NPN)

FEATURES ● Low VCE(sat) ● Compliments FTB1132

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丝印：DAP；Package：SOT-89；TRANSISTOR (NPN)

FEATURES ● Low VCE(sat) ● Compliments FTB1132

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丝印：DAQ；Package：SOT-89；TRANSISTOR (NPN)

FEATURES ● Low VCE(sat) ● Compliments FTB1132

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丝印：DAR；Package：SOT-89；TRANSISTOR (NPN)

FEATURES ● Low VCE(sat) ● Compliments FTB1132

文件：345.3 Kbytes 页数：2 Pages

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丝印：DPAK；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) ● Complements the FTB1184.

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Medium Power Transistor

Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

文件：109.68 Kbytes 页数：4 Pages

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丝印：AFQ；Package：sot-23；Medium Power Transistor

Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

文件：109.68 Kbytes 页数：4 Pages

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