丝印：DAP；Package：SOT-89；Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

文件：118.61 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：DAP；Package：SOT-89；Medium Power Transistor(32V,1A)

FEATURES Low saturation voltage:VCE(sat)=0.15V(typ.) (IC/iB=500mA/50mA) PC=0.5W Complement the 2SB1132. APPLICATIONS NPN silicon transistor.

文件：496.35 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：DAP；Package：SOT-89；TRANSISTOR (NPN)

FEATURES ● Low VCE(sat) ● Compliments FTB1132

文件：345.3 Kbytes 页数：2 Pages

FS

丝印：DAP；Package：SOT-89；Low saturation voltage:VCE(sat)=0.15V

文件：458.86 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：DAP；Package：SOT-89；Medium Power Transistor (32V, 1A)

文件：129.94 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：DAP；Package：SOT-89；Medium Power Transistor (32V, 1A)

文件：173.46 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：DAP；Package：SOT-553；36V, Single-Supply, SOT553, General-Purpose OPERATIONAL AMPLIFIERS

文件：1.14557 Mbytes 页数：30 Pages

TI1

德州仪器

丝印：DAP；Package：SOT-553；Single-Supply, SOT553, General-Purpose Operational Amplifiers

文件：1.74714 Mbytes 页数：43 Pages

TI1

德州仪器

丝印：DAP；Package：SOT-553；36V, Single-Supply, SOT553, General-Purpose OPERATIONAL AMPLIFIERS

文件：1.39204 Mbytes 页数：33 Pages

TI1

德州仪器

丝印：DAPA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ, and High PSRR

Dual LDO with Low Noise, Low IQ, and High PSRR ISL9012 is a high performance dual LDO capable of sourcing 150mA current from Channel 1, and 300mA from Channel 2. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Featu

文件：595.95 Kbytes 页数：12 Pages

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