N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Mount height 1.1mm. • Composite type, facilitating high-density mounting. • Drain common specifications.

文件：54.36 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

ONSEMI

安森美半导体

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

文件：24.1 Kbytes 页数：3 Pages

NTE

Self-Contained Audio Preamplifier

GENERAL DESCRIPTION The SSM2017 is a latest generation audio preamplifier, combin ing SSM preamplifier design expertise with advanced process ing. The result is excellent audio performance from a self contained 8-pin mini-DIP device, requiring only one external gain set resistor or potentiom

文件：243.51 Kbytes 页数：8 Pages

AD

亚德诺

Self-Contained Audio Preamplifier

GENERAL DESCRIPTION The SSM2017 is a latest generation audio preamplifier, combin ing SSM preamplifier design expertise with advanced process ing. The result is excellent audio performance from a self contained 8-pin mini-DIP device, requiring only one external gain set resistor or potentiom

文件：243.51 Kbytes 页数：8 Pages

AD

亚德诺