DIODE TRIO WAI TYPE Low forward voltage drop

Features * Low forward voltage drop * High current capability * High reliability ​​​​​​​* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

文件：304.66 Kbytes 页数：1 Pages

FCI

富加宜

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Features * Low forward voltage drop * High current capability * High reliability ​​​​​​​* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

文件：304.66 Kbytes 页数：1 Pages

FCI-CONNECTOR

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

文件：126.58 Kbytes 页数：4 Pages

FS

丝印：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

文件：126.58 Kbytes 页数：4 Pages

FS

丝印：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

文件：126.58 Kbytes 页数：4 Pages

FS

丝印：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

文件：126.58 Kbytes 页数：4 Pages

FS

丝印：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

文件：126.58 Kbytes 页数：4 Pages

FS

丝印：D-PAK；Package：TO-252；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

文件：330.64 Kbytes 页数：2 Pages

FS

丝印：I-PAK；Package：TO-251；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

文件：354.01 Kbytes 页数：2 Pages

FS

DIODE TRIO WAI TYPE Low forward voltage drop

FCI

富加宜