| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 文件:28.25 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. 文件:42.03 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. 文件:72.13 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. 文件:28.6 Kbytes 页数:4 Pages | SANYO 三洋 | SANYO | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件:71.31 Kbytes 页数:8 Pages | Intersil | Intersil |
技术参数
- Supply Voltage:
3.3 V min.
- Sensitivity:
6.6 mV/V/N min.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | |||
SANYO |
2015+ |
SMD/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
FSC |
17+ |
QFN |
6200 |
100%原装正品现货 |
询价 | ||
SANYO |
02+ |
SOP8 |
2600 |
全新原装进口自己库存优势 |
询价 | ||
SANYO |
23+ |
SOP8 |
52000 |
原装正品,假一罚十 |
询价 | ||
SANYO |
24+ |
SOP8P |
6980 |
原装现货,可开13%税票 |
询价 | ||
FAIRCHILD |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
FSC |
24+ |
SO-8 |
5000 |
询价 | |||
N/A |
25+ |
SOP8 |
1000 |
强调现货,随时查询! |
询价 | ||
SANYO |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
询价 |
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