2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

文件：71.31 Kbytes 页数：8 Pages

Intersil

1 Amp. Surface Mounted Schottky Barrier Rectifier

[FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries

文件：43.6 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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Load Switching Applications

Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4.0V drive.

文件：28.44 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Load switching applications. • Low ON-resistance. • 4V drive.

文件：43.09 Kbytes 页数：4 Pages

SANYO

三洋

1 Amp. Surface Mounted Schottky Barrier Rectifier

[FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries

文件：43.6 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1 Amp. Surface Mounted Schottky Barrier Rectifier

[FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries

文件：43.6 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • 4V drive.

文件：43.17 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

文件：42.89 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：43.31 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low-ON-reisistance. • 4V drive. • Halogen free compliance.

文件：277.45 Kbytes 页数：4 Pages

SANYO

三洋