1 Amp. Surface Mounted Schottky Barrier Rectifier

[FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries

文件：43.6 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件：45.08 Kbytes 页数：8 Pages

Intersil

Load Switching Applications

Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

文件：28.22 Kbytes 页数：4 Pages

SANYO

三洋

Load Switching Applications

Load Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive.

文件：41.75 Kbytes 页数：4 Pages

SANYO

三洋