FS1902技术资料参数原装现货新芯矽创-114ic电子网

首页 >FS1902>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
FS1902	文件：300 bytes Page：1 Pages	DCDC	FOESEMI 新芯矽创	FOESEMI
HDMR1902SSM	文件：334.88 Kbytes Page：1 Pages	HIGH SPEED I/O RECEPTACLES 文件：334.88 Kbytes 页数：1 Pages	Samtec 美国申泰	Samtec
IRF1902	文件：107.28 Kbytes Page：9 Pages	Power MOSFET(Vdss=20V) Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati 文件：107.28 Kbytes 页数：9 Pages	IRF	IRF
IRF1902PBF	文件：134.34 Kbytes Page：9 Pages	HEXFET Power MOSFET Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati 文件：134.34 Kbytes 页数：9 Pages	IRF	IRF

更多FS1902供应商更新时间2025-12-26 14:31:00