HIGH SPEED I/O RECEPTACLES

文件：334.88 Kbytes 页数：1 Pages

Samtec

美国申泰

Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：107.28 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：134.34 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：139.79 Kbytes 页数：9 Pages

IRF