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FQD30N06

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:660.63 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:739.93 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=22.7A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.045Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:305.89 Kbytes 页数:2 Pages

ISC

无锡固电

FQD30N06L

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:739.96 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06L

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:649.71 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06LTM

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:739.96 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06TF

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:739.93 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD30N06TF

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件:904.99 Kbytes 页数:4 Pages

BYCHIP

百域芯

FQD30N06TM

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件:763.26 Kbytes 页数:4 Pages

BYCHIP

百域芯

FQD3N25

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:305.41 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -500

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    -5

  • ID Max (A):

    -2.1

  • PD Max (W):

    50

  • RDS(on) Max @ VGS = 10 V(mΩ):

    4900

  • Qg Typ @ VGS = 10 V (nC):

    18

  • Ciss Typ (pF):

    510

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
FAIRCHILD
24+
SOT-252
13500
询价
仙童
05+
TO-252
8000
原装进口
询价
原厂
23+
TO-252
5000
原装正品,假一罚十
询价
FAIRCHIL
25+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD
20+
TO-252(DPAK)
36900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD
25+
TO-252
30000
代理全新原装现货,价格优势
询价
FAIRCHILD
25+
SOT-252
32500
普通
询价
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
FAIRCHILD/仙童
23+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022+
TO-252
50000
原厂代理 终端免费提供样品
询价
更多FQD3供应商 更新时间2026-4-17 16:30:00