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FQD13N10

100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件:619.06 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD13N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:304.91 Kbytes 页数:2 Pages

ISC

无锡固电

FQD13N10

丝印:DPAK;Package:TO-252;N-Channel MOSFET Transistor

文件:269.39 Kbytes 页数:2 Pages

TGS

FQD13N10

N-Channel QFET MOSFET

文件:1.37659 Mbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD13N10

N-Channel QFET MOSFET

文件:867.56 Kbytes 页数:8 Pages

FAIRCHILD

仙童半导体

FQD13N10

功率 MOSFET,N 沟道,QFET®,100 V,10 A,180 mΩ,DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •10A, 100V, RDS(on)= 180mΩ(最大值)@VGS = 10 V, ID = 5A栅极电荷低(典型值:12nC)\n•低 Crss(典型值20pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

FQD13N10L

100V N-Channel MOSFET

Description This advancedMOSFET technology has been especially tailored to reduceon-state resistance, and to provide superior switchingperformance and high avalanche energy strength. Thesedevices are suitable for switched mode power supplies,audio amplifier, DC motor control, and variable sw

文件:675.84 Kbytes 页数:7 Pages

EVVOSEMI

翊欧

FQD13N10L

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件:998.7 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

FQD13N10L

100V N-Channel MOSFET

Features VDS (V) = 100V ID = 10A (VGS = 10V) RDS(ON)

文件:854 Kbytes 页数:7 Pages

UMW

友台半导体

FQD13N10L

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件:548.81 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    100

  • VGS Max (V):

    ±25

  • VGS(th) Max (V):

    4

  • ID Max (A):

    10

  • PD Max (W):

    40

  • RDS(on) Max @ VGS = 10 V(mΩ):

    180

  • Qg Typ @ VGS = 10 V (nC):

    12

  • Ciss Typ (pF):

    345

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价FQD13N10即刻询购立享优惠#长期有货
询价
FAIRCHILD/仙童
17+
TO-252(DPAK)
31518
原装正品 可含税交易
询价
FAIRC
1415+
TO-252(DPAK)
28500
全新原装正品,优势热卖
询价
仙童
06+
TO-252
8000
原装
询价
FAIRCHILD
24+
TO-252(DPAK)
8866
询价
FAIRCHI
18+
TO-252
85600
保证进口原装可开17%增值税发票
询价
FAIRCHIL
25+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
FSC
2018+
26976
代理原装现货/特价热卖!
询价
FAIRCHILD
18+
TO-252
41200
原装正品,现货特价
询价
FSC
25+
TO252
30000
代理全新原装现货,价格优势
询价
更多FQD13N10供应商 更新时间2026-4-21 20:36:00