100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：548.81 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：998.7 Kbytes 页数：10 Pages

Fairchild

仙童半导体

100V N-Channel MOSFET

Features VDS (V) = 100V ID = 10A (VGS = 10V) RDS(ON)

文件：854 Kbytes 页数：7 Pages

UMW

友台半导体

100V N-Channel MOSFET

Description This advancedMOSFET technology has been especially tailored to reduceon-state resistance, and to provide superior switchingperformance and high avalanche energy strength. Thesedevices are suitable for switched mode power supplies,audio amplifier, DC motor control, and variable sw

文件：675.84 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel 100 V (D-S) MOSFET

文件：1.01052 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

100V N-Channel MOSFET

Features VDS (V) = 100V ID = 10A (VGS = 10V) RDS(ON)

文件：854 Kbytes 页数：7 Pages

UMW

友台半导体

100V N-Channel MOSFET

Description This advancedMOSFET technology has been especially tailored to reduceon-state resistance, and to provide superior switchingperformance and high avalanche energy strength. Thesedevices are suitable for switched mode power supplies,audio amplifier, DC motor control, and variable sw

文件：675.84 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.41186 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel 100 V (D-S) MOSFET

文件：1.0105 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，10 A，180 mΩ，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •10A, 100V, RDS(on)= 180mΩ（最大值）@VGS = 10 V, ID = 5A栅极电荷低（典型值：8.7nC)\n•低 Crss（典型值20pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体