MTD6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD6N15I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

NTD6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD6N15

N-ChannelMOSFET

SSM6N15AFE

LoadSwitchingApplications

SSM6N15AFU

LoadSwitchingApplications

SSM6N15FE

HighSpeedSwitchingApplications

SSM6N15FU

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

HighSpeedSwitchingApplications AnalogSwitchingApplications •Smallpackage •LowONresistance:Ron=4.0Ω(max)(@VGS=4V) :Ron=7.0Ω(max)(@VGS=2.5V)

SSM6N15FU

DualN-Channel60V(D-S)MOSFET

T6N15CA

Surface-MountPAR®TransientVoltageSuppressors

FEATURES •Low-profilepackage-typicalheightof0.88mm •LeadlessDFNpackagewithside-wettable flankssuitableforcustomerAOI(Automatic OpticalInspection) •Idealforautomatedplacement •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=18