200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：560.92 Kbytes 页数：9 Pages

FAIRCHILD

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200V P-Channel MOSFET

ONSEMI

安森美半导体

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：560.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

QFET P-CHANNEL

FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 2.06Ω (Typ.)

文件：529.83 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：549.29 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体