Plastic-Encapsulate MOSFETS

Description The FQ60P05Q uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications.

文件：833.56 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

P-Channel Enhancement Mode Power MOSFET

文件：460.68 Kbytes 页数：4 Pages

FS

P -Channel Enhancement Mode Field Effect Transistor

文件：669.71 Kbytes 页数：4 Pages

MCC

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：381.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能