丝印：Q60P05141；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：460.68 Kbytes 页数：4 Pages

FS

MOS FET:Low Voltage

First Silicon

P -Channel Enhancement Mode Field Effect Transistor

文件：669.71 Kbytes 页数：4 Pages

MCC

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：381.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：416.25 Kbytes 页数：7 Pages

NCEPOWER

新洁能